The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Controlled synthesis of ultra-long AlN nanowire arrays in different growth density has been successfully realized by direct nitridation of Al powders for the first time. These AlN nanowires have an average diameter of about 100 nm and their mean length is over 50 μm. All the synthesized ultra-long nanowires are pure single crystalline h-AlN structures with the growth orientation of [0001]. We propose...
Barrier engineered charge-trapping NAND flash (BE-CTNF) devices are extensively examined by theoretical modeling and experimental validation. A general analytical tunneling current equation for multi-layer barrier is derived using WKB approximation. The rigorously derived analytical form is valid for both electron and hole tunneling, as well as for any barrier composition. With this, the time evolution...
The role of AI2O3 in MANOS device is critically examined, and we conclude that its primary function is to reduce gate injection during erase operation. By itself, AI2O3 cannot stop charge leakage from the charge-trapping nitride layer. Furthermore, AI2O3 provides no magic during the erase operation, and MANOS erases very slowly through charge de-trapping. BE-SONOS [1], with the band engineered ONO...
A bandgap engineered SONOS (BE-SONOS) (Lue et al., 2005) using Al2O3 top blocking layer and metal gate (MA BE-SONOS) is proposed to provide very fast erase speed without erase saturation. Compared with MANOS (Shin et al., 2005) using a thick (4.5 nm) tunnel oxide, MA BE-SONOS shows dramatically faster erase speed, owing to the help of bandgap engineered ONO barrier that facilitates hole tunneling...
Variable magnetic field Hall measurements were performed to investigate the electrical properties in In0.52Al0.48 As/In0.65Ga0.35As metamorphic high electron mobility transistors (MMHEMTs) on GaAs substrate at the temperature range from 4 to 100 K. The Shubnikov-de Hass (SdH) measurement shows the two-dimensional electronic behavior and two-subband electron occupation in MMHEMTs. The electron densities...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.