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Intensive investigation on WO3-x nanostructures has been carried out in the last decade because they possess extraordinary properties. Especially for application in field emission, W18O49 nanostructures have exhibited excellent performance. Some issues have to be addressed in fabricating vacuum microelectronic devices using W18O49 nanostructures, including how to realize well aligned nanostructure...
The authors have developed a new method to fabricate patterned W18O49 nanowire arrays by combination of thermal evaporation and lift-off technology. It is found that the phosphoric acid processing of the lift-off technology has strong effect on the field emission property of W18O49 nanowires.
The microstructure and electrical properties of the WOX -based resistive random access memory are investigated in this letter. The WOX layer is formed by converting the surface of the W plug with a CMOS-compatible rapid thermal oxidation process. The conductive-atomic-force-microscopy result indicates that nanoscale conducting channels exist in the WOX layer and result in a low initial resistance...
The multi-level operation of WOx based RRAM has been investigated. Improvement of our WOx process has produced an extended linear R-V region for our devices. By adding an electrical forming process and a program-verify algorithm we have demonstrated stable 2-bit/cell operation, with potential for 3-bit/cell. The reliability of the MLC operation has been examined and very stable high temperature retention,...
WSix metal resistors have been processed and characterized for CMOS technologies. It demonstrates good precision control and excellent quality factors for resistor applications. It can also be used for electrode of MIM capacitor simultaneously. This material and process are compatible for both Al and Cu back-end technologies and can be integrated as a module in these interconnects.
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