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The interference and fringing field effects beyond sub-30 nm node charge-trapping(CT) NAND Flash are studied critically using 3D simulation. Due to the relatively large EOT (>15 nm) compared to the device dimension (F), the most severe interference comes from adjacent pass-gate WL bias disturb through the edge fringing field effect. On the other hand, the program charges in adjacent devices generate...
In NAND flash, devices are normally erased to negative Vt and then programmed to positive Vt. In this work we introduce a novel depletion-mode (normally on) buried-channel, junction-free n-channel NAND flash device. The buried-channel NAND flash shifts the P/E Vt ranges below those for the conventional surface-channel device, and is more suitable for the NAND Flash memory design. Due to the lower...
We have successfully demonstrated a novel junction-free BE-SONOS NAND Flash. Junction-free devices greatly improve the short channel effect and thus promise scaling of NAND Flash below 20 nm node. Instead of S/D junctions a very small space (Lt 30 nm) is left between adjacent devices. Junction is formed only at the outer region of NAND array, while there is no junction inside the array. Fringe field...
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