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Low temperature (4.5 K) photoluminescence measurements and two-dimensional [115] high resolution X-ray diffractometry rocking curves of antimony doped III–V–N on GaAs grown by solid source molecular beam epitaxy, show a possible non-radiative recombination defect known as the Sb Ga heteroantisite and another Sb-related defect peak at 1017 nm (∼1.22 eV). The elimination of these defects can...
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