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AlGaN/GaN based double heterosturcture high electron mobility transistor (HEMT) structures were grown on GaN buffer/Si(111) substrate by plasma assisted molecular beam epitaxy (PAMBE) technique. The thickness of GaN buffer layer was varied to find out the optimum GaN buffer layer for a crack free heterostructure, exhibiting appreciable structural and optical results. Full width at half maximum (FWHM)...
The origin and management of DC-RF dispersion in InAlN-based GaN high electron mobility transistors (HEMTs) is examined, in conjunction with consideration of the implications for device speed. This study, in which GaN HEMTs with alloyed and non-alloyed ohmic contacts are compared, renders the following observations and hypotheses: 1) We show and explain that dispersion free operation can be achieved...
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