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A hydrofluoric-acid (HF)-free hydrogen plasma dry etching process prior to the deposition of intrinsic amorphous silicon onto thin n-type planar Czochralski silicon wafers is developed. The influence of substrate temperature, hydrogen flow rate, and power density on the passivation quality is investigated. Advanced characterization using spectroscopic ellipsometry and transmission electron microscopy...
Excellent carrier lifetime is obtained by applying a rapid low-temperature hydrogen plasma etch before the deposition of intrinsic amorphous silicon in an industrial ICPECVD reactor. The hydrogen etch process substitutes a conventional HF dip and removes surface oxides via the rapid hydrogen plasma. Process development details such as influence of the temperature, flow rate and power density on the...
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