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In advanced high-k metal gate (HK/MG) technologies, plasma induced damage (PID) during process is unavoidable and has the potential to degrade device performance and gate dielectrics. In most cases, PID can be simply managed by process optimization but the root cause and relevant solutions remain unclear. In this study, (i) the origin of plasma damage on Hafnium-based gate oxide (HfO2) devices is...
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