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A metamaterial was fabricated by capsulating photochromic solution in nanoholes of polycarbonate. Nanoholes not only provided sufficient free volume for dye molecules to change structure for coloration, but also prevented the solution to flow and disturb an optically-induced grating pattern. The material exhibited a blue color by ultraviolet irradiation, and returned to the original transparent state...
We demonstrated 40nm gate length "gate overlapped raised extension structure: GORES MOSFET" without halo implantation and prove that the ultra shallow junction (USJ) could coexist with the reducing parasitic resistance in GORES MOSFET. It is the new concept planar transistor with the gate overlapping the in-situ doped epitaxial extension to break through the trade off relation between reducing...
Sub-1nm EOT and high electron mobility were realized at the same time with HfSix/HfO2 gate stacks. It was revealed that there exist two mobility degradation modes depending on the HfO2 thickness and the HfSix composition. One is the crystallization in the thick HfO2 case (Tinv > 1.6 nm). The other is the Hf penetration into the interfacial layer with the Si substrate (bottom-IFL) in the thin HfO...
We developed a less layout-dependent epitaxially grown SiGe (eSiGe) source/drain (S/D) technique for pFET. We found that the effective stressor region of eSiGe existed only near the channel and that the volume effect of eSiGe was small. On the basis of this mechanism, a new recess RIE and a new epitaxial growth technology were developed, so that the gate-pitch dependence, S/D length dependence and...
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