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We have studied the structural anisotropic characteristics of epitaxially laterally overgrown (ELOG) a-plane GaN epilayer on r-plane sapphire substrate with two different SiO2-stripe orientations using metal organic chemical vapor deposition. The SiO2 stipe patterns were made along [0001] and $$\left[ {1\underset{\raise0.3em\hbox{$\smash{\scriptscriptstyle-}$}}{1} 00} \right]$$ crystographilic...
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