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In this paper, we propose using a terahertz quantum-well photodetector (THz QWP) in combination with a terahertz source to realize a detection system with photon-noise limited performance (PLIP) at high temperatures. Systematical investigations on the high-temperature performances of THz QWPs, including required signal power density for PLIP, detectivity, and the signal-to-noise ratio, have been carried...
Hematite has emerged as a good photocatalyst for efficient solar water splitting due to its favorable optical band gap (2.1–2.2 eV), extraordinary chemical stability in oxidative environment, abundance, and low cost. According to theoretical prediction, the solar-to-hydrogen efficiency of hematite can be 16.8% and the water splitting photocurrent can be 12.6 mA cm−2. However, the practical performance...
From semiconductor quantum well structures to the currently hottest metamaterials, the conquest of nano-world has been occurring in almost every field of research. In the field of quantum well structures for infrared photodetection, the inclusion of dilute nitride layers in the mature GaAs based quantum well structures results in a TE dominate photocurrent and the incorporation of nitrogen in the...
High quality InSb and InSbN alloys were grown epitaxially on InSb (100) by metal-organic chemical vapor deposition. Low temperature photoluminescence spectra of InSb epilayers revealed that in addition to the main band-to-band emission around 5.4 μm, an emission peak around 5.87 μm was also be observed. Our results indicate that the low energy emission peak was originated from the antisite SbIn defects...
InSbN p-n junctions are fabricated by direct implantation of N+ and Mg+ into InSb wafers and their electrical and optical properties are characterized. It is found that high quality p-n junctions can be formed and they can absorb photons to form photocurrent. Furthermore, the peak and cut-off wavelengths absorbed can be controlled by monitoring the incorporated nitrogen and the measured peak wavelengths...
This paper reports recent experimental work on single junction II-VI semiconductor heterostructure solar cells consisting of n-type CdSe and p-type ZnTe grown by molecular beam epitaxy on GaSb substrates. The structural and crystalline properties are characterized using high-resolution X-ray diffraction measurements. The current-voltage measurements reveal expected diode-like rectifying characteristics...
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