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Hole transport material (HTM) free and WOx based perovskite solar cells are theoretically investigated by using driftdiffusion and small signal models. The influence of interface states and leakage current is studied, and the current-voltage (J-V) and capacitance-voltage (C-V) characteristics are reproduced in reasonable agreement with experimental data, including build in potential (Vbi) variation,...
In this study, the optoelectronic properties of a monolithically integrated series-connected tandem solar cell are simulated. Following the large success of hybrid organic-inorganic perovskites, which have recently demonstrated large efficiencies with low production costs, we examine the possibility of using the same perovskites as absorbers in a tandem solar cell. The cell consists in a methyl ammonium...
For the first time, we report a novel self-powered TFT panel (30×40cm2) by integration of sputtering/non-toxic Se vapor selenization copper-indium-gallium-selenide (CIGS) solar cell (conversion efficiency of 8%) and high electron-mobility (172 cm2/V-s) micro-crystalline (μc)-Si TFTs.
Highly stable high-density plasma-fabricated amorphous Si solar cells (7–9%) exhibit ultra-low photo-induced degradation in conversion-efficiency by 5.7%. This photovoltaic device with low-defect absorption layer is also a near-omni-directional solar-electricity generator.
The non-closely packed (surface-coverage of 55–65%) sub-micron silica sphere (400 nm) light-trapping monolayer was introduced to boost photocurrent (efficiency) of thin film amorphous solar cells by 15% (6.9%). The enhancement is nearly omni-directional.
For the first time, we report a low temperature silicon thin film deposition technology using high density plasma for high performance and low cost solar cells with embedded transistor modules. For process temperature at 140°C, energy conversion efficiency of 9.6% and electron mobility of 1.1 cm2/V-s have been achieved. Device performance with process temperature down to 90°C and 60°C has also been...
Record fabrication temperature, 100°C, of a single junction amorphous Si solar cell was demonstrated by a high-density plasma method. Present solar cell revealed conversion efficiency of 7.4% at 200°C (4.1% at 135°C).
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