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Metal-ferroelectric-insulator-silicon field-effect-transistors (MFISFETs) of Au/PZT/CeO2/Si were fabricated by the novel method of chemical mechanical polishing (CMP) damascene process. The vertical sidewall without the surface and/or plasma damage could be easily fabricated by it. The typical ferroelectric characteristics were sucessfully obtained although the remanent polarization value was low.
BLT thin film capacitor was fabricated by the novel method of chemical mechanical polishing (CMP) process. The electrical characteristics including P-V and I-V of BLT capacitor were damaged by the polishing pressure which is one of the main factors to improve the CMP performance for BLT thin film; therefore, the lower polishing pressure must be selected for the good electrical characteristics although...
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