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The dependence of Raman scattering spectra on Sn composition in the amorphous Ge1-xSnx films deposited on Si(001) substrates by magnetron sputtering is investigated. Two broad phonon scattering peaks are clearly observed, which are attributed to the disordered SnSn and GeGe bonds, shifting to lower wavenumbers with the increase of Sn content. The ratio of integrated intensity of SnSn to GeGe modes...
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