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We have developed novel real-time methodology to determine intrinsic forming and switching characteristics of HfOx based RRAM. Elimination of parasitics in 50nm × 50nm cross-bar 1T1R devices (Cp< 50fF) integrated on 300mm wafers using fab-friendly TiN electrodes enabled superior control of high and low resistance of a conductive filament (CF). Sub 50fF parasitics also critically enable a pulsed...
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