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In this paper, the forward gated-diode method is used to extract the gate oxide thickness and doping concentration of MOS device simultaneously. The gate oxide thickness and body doping concentration are first extracted from the recombination-generation (R-G) current, and then from the simulation result of ISE-Dessis. The results obtained from R-G method shows a good agreement with the simulation...
In this paper a potential based model for monocrystalline silicon thin film transistor (TFT) systems on glass (SOG) substrate from the accumulation to the strong-inversion region is developed. By solving the complete dimensional (1D) Poisson's equation, the potential distribution in the channel is obtained. The analytic drain current is expressed accurately base on the potential solution. Compared...
Energy bandstructures of unstrained and strained [100] silicon nanowires are calculated with nearest neighbor (NN) sp3d5s* tight binding model. Square nanowires with four {110} bounding facets of various thicknesses are simulated. It is found that bandgaps of nanowires increase with decreasing the wire thickness. Uniaxial strain effects are accounted for by displacing the silicon atoms and modifying...
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