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We propose a novel method to turn OFF the lateral insulated gate bipolar transistor (LIGBT) device. Contrary to the conventional means, we improve the LIGBT switching speed by boosting the carrier density in the drift region. With the introduction of a high-permittivity material (HK) into a novel LIGBT structure, a parasitic pMOS with an HK dielectric is formed. The electric field from the pMOS source...
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