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A GaN HEMT class-F power amplifier (PA) achieving a high maximum power added efficiency (PAE) is presented. The class-F PA exhibits maximum PAE of 82.9% with an output power of 39dBm at 1.89GHz. The PA shows PAE higher than 75% over 100MHz frequency range from 1.8GHz to 1.9GHz. Source-pull and load-pull techniques in large signal analysis were conducted to satisfy the optimum load resistance at fundamental...
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