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Micro‐LEDs are regarded as ideal light sources for next‐generation display and high‐speed visible‐light communication (VLC). However, the conventional micro‐LEDs based on InGaN quantum well (QW) active region suffer from a low efficiency under small injection (below 1 A cm−2) due to the size‐dependent effect and a limited 3 dB bandwidth (hundreds of MHz) due to quantum‐confined Stark effect. Here,...
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