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Crystalline germanium (Ge) is a prime candidate as a material for high-performance transistors due to its higher electron and hole mobility with respect to those of silicon. In this study, we present a novel method of fabricating epitaxial Ge structures of high crystalline and morphological quality directly onto Si substrates, in which 3D Ge structures are grown by selective epitaxy then annealed...
We have investigated the surface reactivity of the Li- and Na-induced Ge(111)-3x1 surfaces in ultrahigh vacuum (mid-10 -10 Torr range) using core-level photoemission. The core-level peaks from the Li/Ge(111)-3x1 surface showed significant changes over about 15 min, while those from the Na/Ge(111)-3x1 surface remained unchanged. We identified that the changes in the Li/Ge(111)-3x1...
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