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Carbon-iron composite films with different thicknesses (50, 100 and 150 nm) were deposited by DC magnetron sputtering method using a composite target (Fe: 4 at%, C: 96 at%). The resistive switching behaviors of Pt/Al/a-C:Fe/Au/Ti structures with different a-C:Fe film thicknesses are investigated. Abnormal bipolar resistive switching characteristics were observed in all Pt/Al/a-C:Fe/Au/Ti memory cells...
In this work, tantalum nitride (TaN) was chosen as the wet etch stop layer (WESL) for its application in the 22 nm and beyond nodes CMOS technology. TaN WESL prevents the attacking of titanium nitride (TiN)/hafnium dioxide (HfO 2 ) stack covering n-channel MOS (nMOS) regions from selectively stripping work function metals of p-channel MOS (pMOS) gate, i.e. TiN & titanium (Ti), by ammonia...
Amorphous silicon (a-Si:H) thin film solar cells were prepared in a single chamber large area plasma enhanced chemical vapor deposition (PECVD) system. A purging process using silane (SiH 4 ) gas was developed to remove the residual contaminations in the reactor after a nitrogen trifluoride (NF 3 ) plasma dry cleaning process. Such a purging treatment leads to a clear improvement in...
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