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We have fabricated electrically reliable band-edge (BE) high-k/metal nMOSFETs stable to 1000degC, that exhibit the highest mobility (203 cm2/Vs @ 1MV/cm) at the thinnest Tinv (1.4 nm) reported to date. These stacks are formed by capping HfO2 with ultra-thin layers containing strongly electropositive gp. IIA and IIIB elements (e.g. Mg and La), prior to deposition of the TiN/Poly-Si electrode stack,...
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