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GaSb/AlGaSb multi-quantum well (MQW) structures with an AlSb initiation layer and a relatively thick GaSb buffer layer grown on Si (001) substrates were prepared by molecular beam epitaxy (MBE). Transmission electron microscopy (TEM) images and high-resolution X-ray diffraction (XRD) patterns indicated definite MQW structures. The photoluminescence (PL) emission around 1.55μm wavelength was observed...
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