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Single-electron tunneling (SET) transistors have been studied for the past several decades because they are promising for low-power consumption and fundamental-level control of charge. The quantum dots (QDs) that are the main part of an SET transistor have been demonstrated in a variety of materials, but recently dopant-atoms in silicon have also been shown to work as QDs. However, a single conventional...
We report for ultra-thin Si tunnelling diodes that negative differential conductance (NDC) is dominated by the excess current at room temperature. This is attributed to the gap-states induced by the co-dopants in the pn junction. First-principles simulation shows that the presence of co-dopants in the pn junction region leads to an increase in the interband tunnelling current by two orders of magnitude...
The paper presents design, analysis and fabrication of novel silicon-based, low power, non-volatile NEMS logic switches. Non-volatility is achieved by exploiting the Casimir effect and the van der Waals force at mechanical contact between an in-plane, laterally moveable transistor channel and two opposing side gates. Mechanical symmetry is implemented in the design for switching to be energy reversible...
We study the electron transport through silicon serial triple quantum dots (TQDs) formed effectively in a lithographically-defined multiple quantum dot system on a silicon-on-insulator substrate at a temperature of 4.2K. Our serial TQDs are composed of two lithographically-patterned QDs and another one in-between formed by stress during the pattern-dependent oxidation process. The TQDs formation is...
This paper presents a brief review of our recent work investigating a novel bottom-up approach to realize silicon-based nanoelectronics. We discuss fabrication technique, electronic properties, and device applications of silicon nanodots as a building block for various nanoscale silicon devices.
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