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48 nm pitch dual damascene interconnects are patterned and filled with ruthenium. Ru interconnect has comparable high yield for line and via macros. Electrical results show minimal impact for via resistance and around 2 times higher line resistance. Resistivity and cross section area of Ru interconnects are measured by temperature coefficient of resistivity method and the area was verified by TEM...
Chip level electromigration (EM) reliability is determined by: 1) the element level EM failure probability used for design guideline generation; and 2) the distribution of EM elements against design limits. Balancing these two factors is critical for a chip design to achieve the best performance while maintaining chip level EM reliability. This paper discusses the relationship between element level...
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