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Time Dependent Dielectric Breakdown (TDDB) in p-FETs with HfSiON/SiO2 gate stacks under negative bias stress has been studied. It is shown that the shape parameter of Weibull distribution of Tbd, β, is very small value independent of gate electrode materials. This small β seems to arise from the interface layer (I.L.) breakdown. Further experimental result reveals the existence of additional interface...
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