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In this paper, a 50-μm-pitch coplanar waveguide pattern for on-wafer high-frequency measurements on nanowire FET is used. The contact structure exhibits relatively large parasitic elements in comparison to the intrinsic device making a precise deembedding both necessary and challenging. A single InAs nanowire FET with a large gate length of 1.4 μm possesses after deembedding a maximum stable gain...
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