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Electrical manipulation of exchange bias (EB) enables an additional degree of freedom in the design of innovative spintronic devices. However, the electrical switching of EB via spin–orbit torque (SOT) has not been achieved in magnetic tunnel junctions (MTJs), which are one of the building blocks in spintronic devices. Herein, based on the SOT in antiferromagnets (AFMs), perpendicular EB reversal...
Exchange bias (EB) effect modified asymmetric magnetization reversal in Ni/YMnO3 multiferroic bilayers was investigated by combining anisotropic magnetoresistance (AMR) with free energy methods. The promotion and inhibition effects of EB field on magnetization rotation result in the asymmetry of magnetization reversal. The AMR curves exhibit shape transition from arc-like to sin2θH-dependence with...
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