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Single-event effects and total ionizing-dose testing was performed on a flash NAND device. The results are presented here and the consequences for error correction architectures are analyzed taking into account the fact that beginning-of-life flash devices are susceptible to data corruption with no external stress applied. The analysis indicates that many typical error correction architectures may...
Total ionizing dose and single event effects testing was performed on 4 Gb NAND flash die used in DDC's 69F24G24 flash NAND devices. If the data is regularly refreshed, the devices show good resistance to corrupted bits during total dose irradiation. In the case of heavy ion irradiation, multi-bit upsets could prove problematic to some error correction schemes.
Single event effect (SEE) testing was performed on the Samsung and Spansion 4 Gb NAND flash devices. Testing was performed up to LET = 41 MeV cm2/mg. The parts were characterized for a variety of SEE. Testing and analysis showed that MBU became more prevalent at higher LET values.
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