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The phase-field approach is used to predict the effect of thickness on domain stability in ferroelectric thin films. The mechanism of strain relaxation and the critical thickness for dislocation formation from both the Matthews–Blakeslee and People–Bean models are employed. Thickness–strain domain stability diagrams are obtained for PbTiO 3 thin films for different strain relaxation models...
The stability and evolution of ferroelectric domain structures in thin films are studied. Elastic solutions are derived for both elastically anisotropic and isotropic thin films with arbitrary domain structures, subject to the mixed stress-free and constraint boundary conditions. These solutions are employed in a three-dimensional phase-field model to investigate simultaneously the effect of substrate...
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