The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
GaN vertical power devices have many advantage over lateral device in device scaling, reliability and thermal management, etc. Traditional power transistors employ p-type pockets to achieve E-mode, RESURF and avalanche capabilities. However, this topology in GaN vertical power transistors has been challenging to implement [1] due to the difficulty to achieve selective area doping without compromising...
This letter reports a GaN vertical fin power field-effect-transistor structure with submicron fin-shaped channels on bulk GaN substrates. In this vertical transistor design only n-GaN layers are needed, while no material regrowth or p-GaN layer is required. A combined dry/wet etch was used to get smooth fin vertical sidewalls. The fabricated transistor demonstrated a threshold voltage of 1 V and specific...
GaN MOSHEMT or MOSFET on top of conducting (drift layer and drain electrode) layers is a building block for vertical GaN VDMOS power transistors. GaN MOSHEMTs incorporating a polarization-doped p-AlGaN layer as the back barrier on top of conducting layers is named as PolarMOSH. In this work, we present a comparative study of PolarMOSH fabricated on SiC and free-standing GaN substrates. PolarMOSH wafers...
Lateral GaN transistors on Si substrates operating at voltage below 650 V are commercially available today. The main drawback of this lateral geometry is that the transistor area (and, therefore, its cost) is proportional to the breakdown voltage. In addition, numerous material interfaces are exposed to high electric fields, which reduces reliability and prevents avalanche breakdown. For higher-voltage...
A transition layer of Ni-P coating will help enhance the hydrogen sensing stability of Pd films supported by silicon wafers. In this work, Pd films were electrodeposited on electroless Ni-P coated silicon wafers. The effect of deposition parameters on the microstructure (especially the morphology) of Ni-P coatings and Pd films were investigated. Experimental results indicated that a lower pH value...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.