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In article number 1902576, Guanxin Zhang, Deqing Zhang, and co‐workers demonstrate the application of a blend thin film of a conjugated semiconducting polymer and a hexaarylbiimidazole derivative to fabricate a photoresponsive/thermally responsive field‐effect transistor. Such transistors can be utilized to fabricate photonically programmable and thermally erasable FET‐based nonvoltaile memory devices...
It is shown that the semiconducting performance of field‐effect transistors (FETs) with PDPP4T (poly(diketopyrrolopyrrole‐quaterthiophene)) can be reversibly tuned by UV light irradiation and thermal heating after blending with the photochromic hexaarylbiimidazole compound (p‐NO2‐HABI). A photo‐/thermal‐responsive FET with a blend thin film of PDPP4T and p‐NO2‐HABI is successfully fabricated. The...
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