The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A new compact and easy-to-achieve edge termination featuring the n-p double rings and all-cover field plates is presented for silicon high-voltage devices. This structure can divide and share much more voltage at each n-p double ring than its conventional counterpart does and thus largely shrink the lateral spreading of the depletion region. At a given blocking voltage, it helps save the chip area,...
For power semiconductor devices, such as IGBTs, MOSFETs and FRDs, a high area efficiency of the edge termination structure can enlarge the active area and thus improve the current capacity for a given chip area. In this paper, a double-sided edge termination (DSET) is proposed for the first time. Simulation results show that it can improve the breakdown voltage by about 42% without increasing the...
For the first time, this paper reveals and explains the detailed contribution of the main-junction lateral resistive zone to the ruggedness of high-voltage fast recovery diodes during a harsh reverse recovery. And its optimized width is discussed.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.