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A set of high level integration, compact size (1.3mm×1.1mm), single die, tri-mode power amplifiers are developed using Bi-FET (HBT+E/D-PHEMT) technology for 3G & 4G mobile handset applications. They have high efficiency optimized at mid and low power modes for long battery life. They also have excellent performance over voltage and over temperature (−40C to +85C). These tri-mode PAMs cover 3GPP...
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