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This paper proposes a novel method to derive the junction temperature of a Silicon Carbide Schottky Barrier Diode (SiC SBD) when it is in operation. There is a correlation between the switching waveforms and the temperature, due to the material parameters and the carrier vary with the temperature. Estimating the Turn-on-delay time as a temperature sensitive electrical parameter (TSEP), the chip temperature...
Temperature field simulation for self-healing power capacitor makes sense to the capacitor optimization and improvement of capacitor’s rated voltage and capacity. On the basis of reasonable simplifications and assumptions for capacitor structure, a 3-D temperature field numerical simulation model for a self-healing power capacitor is formulated in Fluent 15.0. The ambient temperature is set to 55...
To evaluate measurement deviation of c-Si PV modules electrical performance among test laboratories in China, eight testing institutions participated in the interlaboratory comparison test of I-V characteristic measurement of c-Si PV modules. This paper reveals that a maximum ±2% deviation of short circuit current value between each laboratory measurement value and average value. Maximum power values...
A new cable wireless monitoring temperature scheme is proposed, which can monitor cable parameters of various cable, and can be monitored dynamically and transmitted to the dispatch center through the network which consisted with ZigBee network and CAN bus. Then, cable failures early warning function is realized. Simulation and piracies proved that reliability and flexibility of the system is increased,...
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