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Co-doped ZnO thin films fabricated by nanocluster-beam technique were annealed at 200, 400 and 700°C and the influence of temperature has been investigated. AFM images and UV absorbance spectra were carried out. Co-doped ZnO exhibited ferromagnetic at room temperature, and the saturation magnetization of films was also studied following the changing of annealing temperatures.
ZnO thin films were prepared by reactive DC magnetron sputtering under different working pressures. ZnO thin films prepared at 40% O2 content in the mixed gases under the working pressure of 1.2 Pa exhibited excellent properties, such as high transmittance, high band-gap energy (3.27 eV), and good crystallinity with c-axis preferred orientation, which are benefit for the preparation of ZnO thin film...
ZnO thin films were prepared by reactive DC magnetron sputtering under different growth time. It was found that the ZnO thin films prepared at the sputtering time about 10 minutes exhibited excellent properties, such as high transmittance, high band-gap energy (3.25 eV), and good crystallinity with c-axis preferred orientation, which are benefit for the preparation of ZnO-based thin film transistors.
Co-doped ZnO thin films were fabricated by nanocluster-beam technique with different flow rates of helium gas at 200, 100 and 50 sccm and its influence of different flow rates on the properties has been investigated. TEM and AFM images, XPS survey scan and UV absorbance spectra were carried out. Co-doped ZnO exhibited ferromagnetic at room temperature, and the saturation magnetization of films reduced...
A series of experiments for ZnO thin films were made by reactive DC magnetron sputtering different oxygen content in mixed gases. ZnO thin films prepared at 40% O2 content exhibited excellent properties, such as high transmittance, high band-gap energy. These features are benefit for the preparation of ZnO thin film transistors.
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