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ZnO thin films were prepared by reactive DC magnetron sputtering under different working pressures. ZnO thin films prepared at 40% O2 content in the mixed gases under the working pressure of 1.2 Pa exhibited excellent properties, such as high transmittance, high band-gap energy (3.27 eV), and good crystallinity with c-axis preferred orientation, which are benefit for the preparation of ZnO thin film...
ZnO thin films were prepared by reactive DC magnetron sputtering under different growth time. It was found that the ZnO thin films prepared at the sputtering time about 10 minutes exhibited excellent properties, such as high transmittance, high band-gap energy (3.25 eV), and good crystallinity with c-axis preferred orientation, which are benefit for the preparation of ZnO-based thin film transistors.
A series of experiments for ZnO thin films were made by reactive DC magnetron sputtering different oxygen content in mixed gases. ZnO thin films prepared at 40% O2 content exhibited excellent properties, such as high transmittance, high band-gap energy. These features are benefit for the preparation of ZnO thin film transistors.
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