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The preparation and electrical characteristics of bottom-gate Li-N co-doped InZnO (IZO) thin film transistors (TFTs) were studied in this paper. Li-N co-doped IZO thin films were deposited on SiO2/Si substrates by radio frequency magnetron sputtering (RFMS) as an active channel layer at room temperature. The transmittance of the film was over 85% in the visible region after annealing. XRD analysis...
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