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La dopant positioning at HfO2 ultra-thin films was successfully achieved by the co-sputtering method. The depth profiles of graded doping HfLaO (7 nm)/p-Si structures after 850??C RTA were studied. From the nano-AES results, the out-diffusion of Hf atom into Si substrate increases when the La dopant is co-deposited in the upper bond and forming HfLaO/HfO2/Si structures. On the other hand, the out-diffusion...
Well aligned Si nanowires (SiNWs) by Vapor-Liquid-Solid growth process are presented. Instead of using H2, the current work uses N2 as carrier gas. The growth conditions of SiNWs are controlled by the ratio of nitrogen versus silane gas. Tapering of nanowires was found at T=620degC and P=333 m torr, and the tapering parameter was reduced by increasing the N2 gas. Tapering of nanowires is attributed...
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