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A novel three-dimensional device structure for a carbon nanotube (CNT) fin field-effect transistor (FinFET) is proposed and evaluated. We evaluated the potential of the CNT FinFET compared with a Si FinFET at a 22-nm node at the circuit level using three performance metrics including propagation delay, total power dissipation, and energy-delay product (EDP). Compared with a Si FinFET, the CNT FinFET...
The speed of frequency response of all published carbon nanotube (CNT) integrated circuits (ICs) is far from that predicted. The transient response of CNT ICs is explored systematically through the combination of experimental and simulation methods. Complementary field-effect-transistor (FET) based inverters were fabricated on a single semiconducting CNT, and the dynamic response measurement indicates...
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