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Wideband gap semiconductor materials such as SiC and GaN are popular for UV detection applications. Also, epitaxial growth of graphene on SiC is suitable for the development of large area electronic and optoelectronic devices based on EG/SiC junctions. Epitaxial graphene(EG) grown on SiC forms a Schottky junction with highly asymmetric barrier for both electrons and holes. We have previously reported...
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