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We report mW-average-power widely tunable (0.5-3.5 THz) monochromatic THz source based on frequency mixing in periodically-inverted GaAs, between the two closely spaced dasiasignalpsila and dasiaidlerpsila waves, inside the resonant cavity of an optical parametric oscillator.
We developed an efficient frequency-tunable THz source using intracavity mixing between the two resonant waves of a synchronously pumped doubly resonant OPO. Three types of quasi-phase-matched GaAs were utilized: optically contacted, orientation-patterned, and diffusion-bonded GaAs.
We review nonlinear-optical applications of micro-structured quasi-phase matched GaAs. These include new sources of mid-IR coherent radiation, pump-polarization-insensitive devices, as well as sources of tunable terahertz radiation, based on optical rectification or intracavity frequency mixing.
In a previous paper, we described a method for growing thick epitaxial layers of GaAs on orientation-patterned wafers by low pressure hydride vapor phase epitaxy. The low pressure method allows for rapid growth at rates well above 100 mum/hr and layers up to 1 mm thick have been successfully produced. In this paper we present characterization of these layers by optical microscopy, Hall measurement,...
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