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Growing thicker BAlN films while maintaining single‐phase wurtzite structure and boron content over 10% has been challenging. In this study, we report on the growth of 100 nm‐thick single‐phase wurtzite BAlN films with boron contents up to 14.4% by MOCVD. Flow‐modulated epitaxy was employed to increase diffusion length of group‐III atoms and reduce parasitic reactions between the metalorganics and...
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