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A novel multi-finger power SiGe heterojunction bipolar transistor (HBT) with segmented emitter fingers and nonuniform segment spacing was proposed to improve the thermal stability. Thermal simulation for a ten-finger power SiGe HBT with novel structure was conducted with ANSYS software. Three-dimensional temperature distribution on emitter fingers was obtained. Compared with traditional emitter structure,...
A novel segmented emitter structure with nonuniform finger length and spacing has been presented to alleviate adverse thermal effects in multi-finger SiGe HBT power device. Considering the various thermal resistances of different components for the segmented multi-finger HBT, an appropriate thermal model is developed. Using this model, the thermal simulation for a ten-finger power SiGe HBT with segmented...
On-chip spiral inductors with high quality factors are very important in many RF circuits. In this paper, spiral inductors are analyzed to study the influence of substrate and spiral structure on an inductor's performance in the multi-GHz frequency range. Firstly, the inductors with different substrate conductivity, thickness and permittivity of the dielectric layer are compared, and a general guide...
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