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With femtosecond-pulse excitation, two- and three-photon absorption induced ultraviolet lasing with spectral linewidth 0.2–1 nm have been realized under very low excitation threshold from ZnO nanorod arrays at both room and liquid nitrogen temperatures.
With femtosecond-pulse excitation, two- and three-photon absorption induced ultraviolet lasing with spectral linewidth 0.2-1 nm have been realized under very low excitation threshold from ZnO nanorod arrays at both room and liquid nitrogen temperatures.
Ultraviolet lasing emission was observed from the wide band semiconductor ZnO excited by the fs pulses with photon energy less than the half of the bandgap via the Rabi flopping assisted Two-photon process.
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