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The article discusses how bonding concepts have allowed the development of amorphous semiconductors, in particular the 8−N rule of bonding, the doping mechanism in a‐Si:H, the weak effect of disorder on s states in amorphous oxide semiconductors, the strong effect of disorder on p states in amorphous carbon, and the effect of the change from resonant bonding to simple molecular covalent bonding in...
The mechanisms of Schottky barrier formation are reviewed from the metal‐induced gap state model to the universal defect model, and the chemical reaction model. The recent progress in understanding barrier heights and band offsets in Si – high dielectric constant oxide and metal high dielectric constant oxide systems is then discussed, and interesting they contain components of each model. The greater...
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