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Phase-separated Al–Ge films, composed of Al nanowire array with diameters ranging from less than 10 to 18 nm embedded in an amorphous Ge matrix, have been prepared by a sputtering method. Similar to lateral phase separation of Al–Si system, sputtered Al and Ge form an Al nanowire array surrounded by a Ge matrix during film growth when the preparation conditions are optimized. Removal of the Al nanowires...
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