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Solution‐processed metal halide perovskites hold immense potential for the advancement of next‐generation field‐effect transistors (FETs). However, the instability of perovskite‐based transistors has impeded their progress and practical applications. Here, ambient‐stable high‐performance FETs based on 2D Dion–Jacobson phase tin halide perovskite BDASnI4, which has high film quality and excellent electrical...
Field‐Effect Transistors
In article number 2207858, Huajie Chen, Zebing Zeng, Yuanyuan Hu, and co‐workers report a methodology of fabricating electrodes for semiconductor devices by van der Waals integration of doped organic semiconductor films (DOSCFs). The DOSCF electrodes are attractive due to their solution‐processability, mechanically flexibility, and interesting optoelectronic properties. The...
Electrodes are indispensable components in semiconductor devices, and now are mainly made from metals, which are convenient for use but not ideal for emerging technologies such as bioelectronics, flexible electronics, or transparent electronics. Here the methodology of fabricating novel electrodes for semiconductor devices using organic semiconductors (OSCs) is proposed and demonstrated. It is shown...
Doping is a powerful technique for tuning the electrical properties of organic semiconductors (OSCs). Although numerous studies are performed on OSC doping, thus far only a few n‐type dopants have been developed. Herein, two low‐cost nucleophilic organic bases are reported, namely 1,5,7‐Triazabicyclo [4.4.0] dec‐5‐ene (TBD) and 1,5‐Diazabicyclo [4.3.0] non‐5‐ene (DBN) for n‐doping of OSCs. The two...
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