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A short-channel negative capacitance gate-all-around tunnel field-effect transistor (NC-GAA-TFET) with a ferroelectric gate stack is proposed. Device performance is investigated by integrating three-dimensional (3-D) numerical simulation and the 1D Landau–Khalatnikov equation. It is shown that the NC-GAA-TFET has a steeper subthreshold swing and higher on-state current compared to conventional GAA-TFETs,...
Recently, tunnel Field Effect Transistor (TFET) has attracted lots of attention for the low power application since its potential to obtain a steeper subthreshold slope (SS) than conventional MOSFET. So far, only a few one- and two-dimensional (2D) analytical models [1-2] have been reported. However, among these models, the influence of substrate electric field is not included, and the band-to-band...
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