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The etching characteristics of ITO in a BCl 3 /Ar plasma, including the etch rate and selectivity of ITO, were investigated. The maximum etch rate of 62.8nm/min for the ITO thin films was obtained at a BCl 3 /Ar gas mixing ratio of 25%/75%. Ion bombardment by physical sputtering was required to obtain such high etch rates, due to the relatively low volatility of the by-products formed...
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