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We report a study of the generation of silicon dangling bonds (E′ centers) induced in fused silica by 4.7eV laser irradiation in the 10<T<475K temperature range, carried out by in situ optical absorption spectroscopy. The generation of the defects, occurring by transformation of pre-existing precursors, results to be a thermally activated process, quenched below 150K and with a 0.044eV activation...
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